Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition
- 13 November 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (20) , 2951-2953
- https://doi.org/10.1063/1.114822
Abstract
High (2 eV) and low kinetic energy supersonic jets of disilane as well as ultrahigh vacuum chemical vapor deposition have been employed to grow epitaxial silicon thin films on Si(100) wafers at temperatures ranging from 500 to 650 °C. The growth properties and film uniformity are compared in order to characterize the high energy technique. High translational energy disilane supersonic jets increase the efficiency of deposition by increasing the disilane reaction probability. The growth profiles from the high energy jet are sharply peaked due to a focusing of the precursor along the jet centerline.Keywords
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