Determination of spatial potential fluctuations in Si and GaAs inversion layers by weak localization
- 9 March 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (10) , 603-605
- https://doi.org/10.1063/1.98094
Abstract
Drawing upon our current understanding of the weak localization correction to the Drüde conductivity in quasi-two-dimensional systems, a method of measuring the random motion of charge carriers perpendicular to the plane of the quantum confinement is demonstrated. This technique has been applied to silicon inversion layers and a GaAs heterojunction to determine, with subangstrom resolution, the mean fluctuation of the average perpendicular position of the electron wave function during transport parallel to the potential barrier.Keywords
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