X-ray study of LEC-grown InP crystals
- 30 April 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 46 (4) , 563-568
- https://doi.org/10.1016/0022-0248(79)90046-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976
- Dislocation-free GaAs by the liquid encapsulation techniqueJournal of Crystal Growth, 1972
- X-Ray Crystal Collimators Using Successive Asymmetric Diffractions and Their Applications to Measurements of Diffraction Curves. I. General Considerations on CollimatorsJournal of the Physics Society Japan, 1970
- Liquid encapsulation crystal pulling at high pressuresJournal of Crystal Growth, 1968
- Effect of Crystal Perfection and Polarity on Absorption Edges Seen in Bragg DiffractionJournal of Applied Physics, 1962
- Intensity of X-ray reflexion from perfect and mosaic absorbing crystalsActa Crystallographica, 1950