Ionization Rates and Critical Fields in 4H SiC Junction Devices

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 513-516
• https://doi.org/10.4028/www.scientific.net/msf.264-268.513

Abstract

Keywords

• BLOCKING VOLTAGE
• CRITICAL FIELD
• IONIZATION RATES
• JUNCTION BREAKDOWN