Nonplanar power field-effect transistors
- 1 October 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (10) , 1222-1228
- https://doi.org/10.1109/t-ed.1978.19256
Abstract
This paper reviews the criteria involved in the design of silicon power field-effect transistors. Particular emphasis is placed on recent nonplanar structures which will, in the near future, present a serious challenge to bipolar power transistors as linear amplifiers and high-speed switches.Keywords
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