Infrared absorption and photoluminescence of defect levels in the 204- to 255-meV range in p-type GaAs
- 15 March 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (6) , 1952-1955
- https://doi.org/10.1063/1.336424
Abstract
Infrared absorption and photoluminescence measurements have been performed on a series of p‐type GaAs materials, all of which exhibited the so‐called 78‐meV double acceptor. Additional details concerning the negative charge state of the acceptor (204‐meV level) were obtained. A new infrared absorption spectrum which appears to be due to a level at about 255 meV was found and might be related to the 1.284‐eV photoluminescence line. Direct evidence for the existence of the boron antisite defect in as‐grown material is shown for the first time but it is not the source of the double‐acceptor spectra.This publication has 13 references indexed in Scilit:
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