Deep-submicron tungsten gate CMOS technology
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Fabrication of Highly Reliable Tungsten Gate MOS VLSI'sJournal of the Electrochemical Society, 1986
- A new tungsten gate process for VLSI applicationsIEEE Transactions on Electron Devices, 1984
- Refractory metal gate processes for VLSI applicationsIEEE Transactions on Electron Devices, 1979
- 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspectiveIEEE Transactions on Electron Devices, 1979