Large binding due to dispersive screening and bloch function interference in many-valley semiconductors
- 31 January 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 29 (3) , 275-277
- https://doi.org/10.1016/0038-1098(79)91055-x
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Thomas-Fermi dielectric screening in semiconductorsPhysical Review B, 1977
- Ground-state wave function for shallow-donor electrons in silicon. I. Isotropic electron-nuclear-double-resonance hyperfine interactionsPhysical Review B, 1975
- Electronic structure of siliconPhysical Review B, 1974
- Electronic impurity levels in semiconductorsReports on Progress in Physics, 1974
- Theory of localized states in semiconductors. I. New results using an old methodPhysical Review B, 1974
- Valley-Orbit Interaction in SemiconductorsPhysical Review B, 1970
- Band Structure and Impurity StatesPhysical Review B, 1969
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Space Groups and Their RepresentationsPublished by Elsevier ,1957
- Hyperfine Splitting of Donor States in SiliconPhysical Review B, 1955