Applications of amorphous semiconductors in electronic devices
- 1 January 1970
- journal article
- research article
- Published by Taylor & Francis in Contemporary Physics
- Vol. 11 (1) , 21-41
- https://doi.org/10.1080/00107517008204807
Abstract
Switching and memory phenomena in semiconducting glasses, thin films and the variable threshold metal-oxide-nitride-semiconductor MNOS transistor are discussed in light of the available data. Potcntial device applications of these phenomena are analysed, and it is concluded that the variable-threshold transistor appears to be the most commercially attractive and versatile of these devices.Keywords
This publication has 27 references indexed in Scilit:
- Theory of Electronic Switching Effect as a Cooperative PhenomenonPhysical Review Letters, 1969
- Electrical Switching Phenomena in Transition Metal Glasses under the Influence of High Electric FieldsPhysica Status Solidi (b), 1969
- Metal-Insulator TransitionReviews of Modern Physics, 1968
- A thin film, cold cathode, alpha-numeric display panelRadio and Electronic Engineer, 1968
- New conduction and reversible memory phenomena in thin insulating filmsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structuresSolid-State Electronics, 1967
- A hot electron, cold cathode, emitterRadio and Electronic Engineer, 1967
- Coherent Scattering of Hot Electrons in Gold FilmsPhysical Review Letters, 1966
- Switching properties of thin Nio filmsSolid-State Electronics, 1964
- Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963