The Effect of Ion Implantation on the Interdiffusion in Si/Ge Amorphous Artificial Multilayers
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- X-ray characterization of amorphous multilayersScripta Metallurgica, 1986
- Ion beam sputtering apparatus for fabrication of compositionally modulated materialsReview of Scientific Instruments, 1985
- DIFFUSIONPublished by Elsevier ,1985
- Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germaniumThin Solid Films, 1982