Motional effects in the electron spin resonance spectrum of phosphorus in silicon
- 1 September 1966
- journal article
- Published by Elsevier in Physics Letters
- Vol. 22 (4) , 386-387
- https://doi.org/10.1016/0031-9163(66)91190-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electron Spin Resonance in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1965
- Electron Spin Resonance on Interacting Donors in SiliconPhysical Review B, 1964
- The theory of impurity conductionAdvances in Physics, 1961
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation EffectsPhysical Review B, 1959
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959
- Spin Resonance of Impurity Atoms in SiliconPhysical Review B, 1955
- A Mathematical Model for the Narrowing of Spectral Lines by Exchange or MotionJournal of the Physics Society Japan, 1954