12 W broad area semiconductor amplifier with diffraction limited optical output
- 23 May 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (11) , 927-929
- https://doi.org/10.1049/el:19910580
Abstract
Broad area travelling wave GaAlAs SQW optical amplifiers have been fabricated and characterised. Using a 600 μm wide and a 1000 μm long double pass amplifier, 12 W of peak pulsed output power was achieved with a 0.08° wide diffraction limited far-field lobe. Small signal gain of 31 dB was measured in a 400 μm wide active area device.Keywords
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