Watson-sphere-terminated model applied to theAu0andPt−substitutional impurities in silicon

The Watson-sphere-terminated cluster model within the framework of the multiple-scattering $X\alpha$ method is used to carry out electronic-structure calculations for ${\mathrm{Au}}^0$ and ${\mathrm{Pt}}^{-}$ substitutional impurities in silicon. The results are related to the "vacancy" model recently proposed to describe the properties of the elements at the end of the transition-metal series.