Characteristics of a 1.2-µm CMOS technology fabricated on an RF-heated zone-melting recrystallized SOI

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Abstract
0.7-5-µm CMOSFET's were fabricated on SOI which was recrystallized using an RF-heated zone-melting recrystallization (RFZMR) method. The leakage currents of n-channel MOSFET's having gate lengths between 5- and 0.7-µm range between 10-14and 10-12A/µm and show no dependence on channel length. Those of the p-channel MOSFET's were 10-14-10-12A/µm when the gate lengths were longer than 1.2 µm, and increased when the gate lengths were shorter than 1.0 µm. The propagation delay time of the CMOSFET inverter was 0.13 ns per stage at a supply voltage of 3.5 V.