A K-band HEMT low noise receive MMIC for phased array applications
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 521-524
- https://doi.org/10.1109/mwsym.1991.147052
Abstract
A state-of-the-art InGaAs HEMT (high electron mobility transistor) receive MMIC (microwave monolithic integrated circuit) consisting of a low-noise amplifier and a novel 3-bit phase shifter has been fabricated and evaluated for receive phased-array development at 20 GHz. The low-noise amplifier employs series and shunt feedback to provide high gain and low noise performance while the 3-bit phase shifter utilizes a novel switched-allpass approach to minimize circuit size. The monolithic receive chip has demonstrated noise figures of less than 2.75 dB and gains between 11.8 and 14.1 dB for the 8 phase-shift states across the 20.2-21.2 GHz frequency range.<>Keywords
This publication has 2 references indexed in Scilit:
- A 16-element, K-band monolithic active receive phased array antennaPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Very low-noise HEMTs using a 0.2μm T-gateElectronics Letters, 1987