Anodic Oxidation of Hydrogenated Amorphous Silicon and Properties of Oxide

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Abstract
Anodic oxidation in an ethylene glycol solution of potassium nitrate is shown to be capable of forming uniform amorphous layers on hydrogenated amorphous silicon (a‐Si:H) films at room temperature at a rate of 5.5 Å/V up to the maximum thickness of about 2500Å. The process is stable, reproducible, and electrically controllable. The oxidation process and the properties of the anodic oxide films are described, and a detailed comparison is made with the anodization of single‐crystal silicon. The anodization accompanies electroluminescence. The effect of illumination of the anode and the behavior of luminescence from the anode are discussed in detail in an attempt to clarify the electrical behavior of the anode during anodization. The anodic oxide of a‐Si:H displays resistivity of , breakdown strength of and a refractive index of 1.46 (at 6328Å).

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