Development of gate-lag effect on GaAs power MESFETs during aging
- 12 February 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (4) , 139-141
- https://doi.org/10.1049/el:19870098
Abstract
We have observed a gradual degradation of the output power not accompanied by drifts in the classical basic static parameters of a GaAs power MESFET. We report in the letter that this phenomenon can be explained by the development, during aging, of the gate-lag effect.Keywords
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