Gain dependence of the noise in the single electron transistor
- 15 August 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (4) , 2132-2136
- https://doi.org/10.1063/1.371020
Abstract
An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not only due to resistance fluctuations. For one sample, we find a record low minimum charge noise of qn = 9*10^-6 e/sqrt(Hz) in the superconducting state and qn = 9*10^-6 e/sqrt(Hz) in the normal state at a frequency of 4.4 kHz.Comment: 10 pages, LaTex 2.09, 4 figures (epsfigAll Related Versions
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