Determination of Al Composition and DLTS Measurements of Al_xGa_1-xSb on GaSb Substrate

This publication has 15 references indexed in Scilit:

• The Origin of the DX Center in Al_xGa_1-xAs
  Japanese Journal of Applied Physics, 1986
• A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
  Japanese Journal of Applied Physics, 1985
• Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
  Japanese Journal of Applied Physics, 1985
• Shallow and deep donors in direct-gap $n$-type ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{A}\mathrm{s}:\mathrm{S}\mathrm{i}$ grown by molecular-beam epitaxy
  Physical Review B, 1984
• DX Deep Centers in Al_xGa_1-xAs Grown by Liquid-Phase Epitaxy
  Japanese Journal of Applied Physics, 1984
• Comprehensive analysis of Si-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ ($x=0\mathrm{} \mathrm{to} 1$): Theory and experiments
  Physical Review B, 1984
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–
  Japanese Journal of Applied Physics, 1983
• Pressure and compositional dependences of the Hall coefficient inAlxGa1−xAsand their significance
  Physical Review B, 1980
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979
• Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–Al_xGa_1−xAs
  Acta Crystallographica Section A, 1976