Electron Transfer Rate Constants for Majority Electrons at GaAs and GaInP2 Semiconductor−Liquid Interfaces
- 1 September 1997
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 101 (36) , 7038-7042
- https://doi.org/10.1021/jp9714882
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Theoretical Studies of Electron Transfer and Electron Localization at the Semiconductor−Liquid InterfaceThe Journal of Physical Chemistry B, 1997
- Rate Constants for Charge Transfer Across Semiconductor-Liquid InterfacesScience, 1996
- Theoretical and Experimental Upper Bounds on Interfacial Charge-Transfer Rate Constants between Semiconducting Solids and Outer-Sphere Redox CouplesThe Journal of Physical Chemistry, 1996
- Investigation of the Kinetics of Redox Reactions at GaAs Electrodes by Impedance SpectroscopyThe Journal of Physical Chemistry, 1996
- Ideal Behavior at Illuminated Semiconductor-Liquid JunctionsThe Journal of Physical Chemistry, 1995
- Electron transfer dynamics at p-gallium arsenide/liquid interfacesThe Journal of Physical Chemistry, 1992
- Fermi Level Pinning at Pyrite ( FeS2 ) / Electrolyte JunctionsJournal of the Electrochemical Society, 1992
- The Effects of Surface Energetics and Surface Oxide Layers on the Cyclic Voltammetry of Metallocenes at Nonilluminated p ‐ InP ElectrodesJournal of the Electrochemical Society, 1985
- The Influence of Surface Recombination and Trapping on the Cathodic Photocurrent at p‐Type III‐V ElectrodesJournal of the Electrochemical Society, 1982
- A note on the evaluation of Schottky diode parameters in the presence of an interfacial layerElectronics Letters, 1978