Micromachined submicrometer photodiode for scanning probe microscopy

Abstract
A submicrometer photodiode probe with a sub-50 nanometer tip radius has been developed for optical surface characterization on a nanometer scale. The nanoprobe is built to detect subwavelength optical intensity variations in the near field of an illuminated surface. The probe consists of an Al–Si Schottky diode constructed near the end of a micromachined pyramidal silicon tip. The process for batch fabrication of the nanoprobes is described. Electrical and optical characterization measurements of the nanoprobe are presented. The diode has a submicrometer optically sensitive area with a 150 fW sensitivity.