Reactive Ion Etching of TaSix in a CF4-O2 Discharge
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- High-temperature stable TaSix –GaAs Schottky barrierJournal of Vacuum Science & Technology A, 1989
- The Reactive Ion Etching of Tantalum Silicide/Polysilicon Bilayers in Silicon Tetrachloride and Hydrogen ChlorideJournal of the Electrochemical Society, 1989
- High-speed logic at 300K with self-aligned submicrometer-gate GaAs MESFET'sIEEE Electron Device Letters, 1983
- Comparison of GaAs device approaches for ultrahigh-speed VLSIProceedings of the IEEE, 1982