Lift-off process for achieving fine-line metallization
- 1 April 1983
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 1 (2) , 490-493
- https://doi.org/10.1116/1.582632
Abstract
A trilevel lift‐off process using a soluble polyimide as the base layer is described. Al–Cu–Si metallizations are obtained with good pattern fidelity over 1 μm high structures with the use of substrate metallization temperatures of up to 325 °C. The process routinely produces metallizations 1 μm thick with linewidths less than 1.5 μm and pitch less than 2.5 μm.Keywords
This publication has 0 references indexed in Scilit: