Microwave MESFET's fabricated in GaAs layers grown on SOS Substrates
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (10) , 460-462
- https://doi.org/10.1109/EDL.1987.26694
Abstract
Device-quality GaAs layers have been grown on silicon-on-sapphire (SOS) substrates by molecular beam epitaxy (MBE). Microwave MESFET's (gate length of ~0.8 µm) with transconductance of 140 mS/ mm,f_{\max} = 20GHz, andf_{T} = 8.3GHz have been fabricated in these layers.Keywords
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