Growth and analysis of quantum well structures
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 520-530
- https://doi.org/10.1016/0022-0248(91)90515-7
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- The use of high resolution electron microscopy and image simulation to determine the sharpness of InP/GaInAs interfaces in multiple quantum-well structuresUltramicroscopy, 1989
- High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μmElectronics Letters, 1989
- Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor-phase epitaxyJournal of Applied Physics, 1989
- Influence of surface morphology upon recovery kinetics during interrupted epitaxial growthJournal of Crystal Growth, 1989
- Anisotropy effects on excitonic properties in realistic quantum wellsPhysical Review B, 1988
- Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasersIEEE Journal of Quantum Electronics, 1987
- EMS - a software package for electron diffraction analysis and HREM image simulation in materials scienceUltramicroscopy, 1987
- Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruptionJournal of Vacuum Science & Technology B, 1986
- Investigation of InGaAs-InP quantum wells by optical spectroscopySemiconductor Science and Technology, 1986
- Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single HeterostructuresJapanese Journal of Applied Physics, 1985