Modeling the post-burn-in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors

Publisher Website
Google Scholar
Abstract
The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn‐in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 and 2, in the midvoltage range. We develope an analytical model to investigate the physical mechanisms underlying such a characteristic. Consistent with the finding of an experimental work reported recently, our model calculations show that the recombination current in the base has an ideality factor of about 3 in the midvoltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn‐in test. Post‐burn‐in data measured from two different heterojunction bipolar transistors are also included in support of the model.

This publication has 8 references indexed in Scilit: