A 4096-bit word-alterable ROM
- 1 May 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (5) , 610-613
- https://doi.org/10.1109/T-ED.1977.18789
Abstract
The organization and operation of a 4096-bit MNOS word-alterable ROM is described. The device is primarily intended for ROM program storage with electrically alterable capability. However, it can also be used for slow-speed RAM applications where the number of erase-write cycles does not exceed 105per word. Margining means are provided which can predict the device remanence for various erase and write times and reading conditions.Keywords
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