Theoretical prediction of the plasma frequency and moss-burstein shifts for degenerately doped InAs, In[sub 1−x]Ga[sub x]As and InP[sub 1−y]As[sub y]

1 January 1999

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 460 (1) , 457-462
https://doi.org/10.1063/1.57827

Abstract

Theoretical predictions for the plasma frequency and Moss-Burstein shift (optical band gap) of degenerately doped (n>10 19 cm −3 ) InAs, In x Ga 1−x As , and InP 1−y As y are presented. These systems are of interest because they possess desirable optical properties for thermophotovoltaic (TPV) applications. The studies presented are based on electronic band structures calculated using the Full Potential Linearized Augmented Plane Wave (FLAPW) method which includes non-local screened exchange (sX-LDA) and spin-orbit effects. The plasma frequency and Moss-Burstein shift are calculated vs. doping assuming a “rigid band” approximation (i.e. conduction band filling of the “undoped” bands). The doping dependence of the effective mass (band non-parabolicity) plays an important role at the high dopings considered here. This effect leads to a maximum in the plasma frequency vs. doping (2–3×10 14 / s ) and a significant departure from the “constant effective mass” prediction for the optical band gap vs. doping. These calculations are in good agreement with measurements.

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