Transient photocurrent response in polycrystalline silicon thin films
- 15 October 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (8) , 3244-3248
- https://doi.org/10.1063/1.339329
Abstract
Photocurrent transients have been measured in hydrogenated and unhydrogenated (as-deposited) polycrystalline silicon thin-film transistors as a function of gate voltage. For both types of samples, the transients demonstrate dispersive transport and a gate voltage independent shape over a large range of gate voltages. The multiple trapping model for trap controlled transport has been used to develop a schematic model for the gap states. According to this model, the major effect of hydrogenation is the removal of shallow trapping states and it is also accompanied by a small change in dangling bond spin density.This publication has 14 references indexed in Scilit:
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