Ultrasonic attenuation in GaAs from 2K to 300K

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Abstract
Ultrasonic attenuation measurements have been made in GaAs (n-type carrier density 1.3*1016cm-3) between 2K and room temperature at 40 MHz 80 MHz 160 MHz and 320 MHz. The ultrasonic attenuation is dominated by damping due to phonon-phonon interactions and is interpreted in terms of the Woodruff-Ehrenreich theory (1961). In GaAs the attenuation frequency exponent approaches 2 at the highest temperatures and falls towards 1 in the region omega tau =1 (about 30K) these results confirm the predictions of the Woodruff-Ehrenreich theory. Details are given of the Gruneisen parameter average which is operative in this model for the phonon damping.

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