Scattering of charge carriers in silicon surface layers
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (2) , 923-925
- https://doi.org/10.1063/1.1662292
Abstract
The mobility of free carriers in a surface layer of a silicon metal‐oxide‐semiconductor transistor has been computed theoretically. It represents the first realistic approach which attempts to combine Coulomb, phonon, and surface‐roughness scattering to account for the mobility behavior over different temperatures and applied fields. An over‐all semiquantitative agreement between theory and experiment is obtained for both the channel mobility and magnetoresistance effect.This publication has 5 references indexed in Scilit:
- Semiconductor Inversion Layers and Phonons in Half-SpaceJournal of Vacuum Science and Technology, 1972
- Effective surface mobility theorySolid-State Electronics, 1972
- Galvanomagnetic Effects in Silicon Surface Inversion LayersJapanese Journal of Applied Physics, 1971
- Ionised impurity scattering in silicon surface channelsSolid-State Electronics, 1970
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967