Multiple-bit storage properties of porphyrin monolayers on SiO2
- 6 September 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (10) , 1829-1831
- https://doi.org/10.1063/1.1782254
Abstract
Hybrid molecule-silicon capacitors have been fabricated by the self-assembly of a monolayer of porphyrin molecules on a silicon oxide surface. The porphyrin employed [5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II)] attaches to silicon oxide via a phosphonate linkage. Cyclic voltammetry current and capacitance/conductance measurements have been used to characterize the capacitors. The presence of multiple distinct peaks in current density and capacitance/conductance measurements are associated with oxidation and reduction of the molecular monolayer. The charge-storage states of the capacitor indicate applicability for use in multiple-bit memory devices.Keywords
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