A W-band monolithic InGaAs/GaAs HEMT Schottky diode image reject mixer
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A W-band monolithic image reject mixer (IRM) utilizing pseudomorphic InGaAs/GaAs high-electron-mobility transistor (HEMT) diodes has been developed. The monolithic circuit integrates two single-balanced HEMT Schottky diode mixers, a W-band Lange coupler, and a Wilkinson power divider on one chip. The image reject mixer including an external hybrid IF 90 degrees coupler has a measured conversion loss of less than 11 dB and a 12-16-dB rejection with 10-dBm local oscillator (LO) drive at 94.15 GHz. The success of this monolithic IRM development is attributed to the excellent device performance, the simple circuit topology, and a rigorous design/analysis methodology.Keywords
This publication has 3 references indexed in Scilit:
- High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodologyIEEE Transactions on Microwave Theory and Techniques, 1992
- A W-band monolithic downconverterIEEE Transactions on Microwave Theory and Techniques, 1991
- 94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTsIEEE Electron Device Letters, 1990