Infrared Absorption of Reduced Rutile TiSingle Crystals
- 1 March 1959
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (5) , 1222-1226
- https://doi.org/10.1103/physrev.113.1222
Abstract
Rutile Ti single crystal plates have been reduced in hydrogen at about 700°C for several minutes to make them semiconducting. The concentration of oxygen vacancies was controlled by variations of time and temperature. The infrared absorption of a series of plane parallel plates having electrical resistivities ranging from 3 to 0.01 ohm-m has been examined. It is postulated that the electrical conductivity arises from the ionization of either one or two trapped electrons from each oxygen vacancy.
This publication has 5 references indexed in Scilit:
- Electrical Properties of Titanium Dioxide SemiconductorsPhysical Review B, 1953
- Electrical and Optical Properties of Rutile Single CrystalsPhysical Review B, 1952
- The Optical Absorption and Photoconductivity of RutilePhysical Review B, 1951
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949
- The Electrical Conductivity of Titanium DioxidePhysical Review B, 1942