Elimination of End‐of‐Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation
- 1 February 1989
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 136 (2) , 466-471
- https://doi.org/10.1149/1.2096656
Abstract
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