Quantification of hydrogen in a‐Si:H films by ir spectrometry, 15N nuclear reaction, and SIMS

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Abstract
Detailed hydrogen analyses were performed on a series of reactively sputtered a‐Si:H films prepared at 300 °C on metal, silicon, and fused silica substrates with a wide range of hydrogen partial pressures. In ir absorption spectrometry, integrated intensities under bands identified as the stretching (∠2000 cm−1) and wagging (∠600 cm−1) modes were used for the hydrogen determination. These values are compared with hydrogen concentrations determined by 1H(15N,αγ)12C resonant nuclear reaction and SIMS depth‐profiling. In the nuclear reaction technique, reliable hydrogen content can be obtained by calibration with a proton‐implanted silicon standard. In SIMS, however, a standard with hydrogen concentration close to the unknown was needed in order to avoid ionization and matrix effects associated with sputtering. An interesting scheme of surface neutralization in SIMS has emerged for films with high hydrogen content and low electrical conductivity.

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