Self-aligned carbon nanotube transistors with charge transfer doping

Preprint

2 November 2005

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0511039

Abstract

This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the ON- and OFF- transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2-3 orders of magnitude, the device OFF current is suppressed and an excellent Ion/Ioff ratio of six order of magnitude is obtained. The important role played by metal-nanotube contacts modification through charge transfer is demonstrated.

Keywords

All Related Versions

Version 1, 2005-11-02, ArXiv
Published version: Applied Physics Letters, 86 (12).

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