Cavity length dependence of photopumped lasing propertiesofMOCVD-grown ZnSe/ZnMgSSe double-heterostructure
- 19 January 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (2) , 101-102
- https://doi.org/10.1049/el:19950065
Abstract
An internal loss of 4.6 cm-1 is estimated from the cavity length dependence of photopumped blue lasing at room temperature (RT) with a ZnSe/ZnMgSSe double-heterostructure (DH) grown by metal organic chemical vapour deposition (MOCVD). The low internal loss, being comparable to that of molecular beam epitaxy (MBE)-grown DH, implies the feasibility of realising an MOCVD-grown DH device.Keywords
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