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Formation of 20–25Å Thermal Oxide Films on Silicon at 950°–1140°C
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Formation of 20–25Å Thermal Oxide Films on Silicon at 950°–1140°C
Formation of 20–25Å Thermal Oxide Films on Silicon at 950°–1140°C
JA
J. A. Aboaf
J. A. Aboaf
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1 January 1971
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 118
(8)
,
1370
https://doi.org/10.1149/1.2408325
Abstract
No abstract available
Keywords
25A
FORMATION
THERMAL OXIDE FILMS
FILMS ON SILICON
Cited
Cited by 13 articles
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