Silicon photodiode front region collection efficiency models
- 1 July 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (7) , 3993-3995
- https://doi.org/10.1063/1.328186
Abstract
The minority‐carrier transport equations are solved numerically for a realistic model of the front region of a UV‐enhanced silicon photodiode. Surface recombination is shown to be the dominant quantum efficiency reducing mechanism. Auger recombination is shown to be almost negligible for the type of diode under investigation.This publication has 2 references indexed in Scilit:
- The quantum yield of silicon in the visibleApplied Physics Letters, 1979
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977