A scanning-electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors

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Abstract
Analytical expression for the induced current profiles at grain boundaries in polycrystalline solar cells is derived for electron-or light-beam excitation. By fitting the experimental data to the theory it is possible to determine both the interface recombination velocity SGBand the minority-carrier diffusion lengthL. The applicability of the theory is demonstrated by evaluating experimental electron-beam-induced current profiles.