Tin dioxide films prepared by dc sputtering from a pressed powder target

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Abstract
Tin dioxide films were prepared by dc glow-discharge sputtering, using a target of compressed SnO2 powder. The films thus produced are conductive at room temperature (σ=3×10−5 Ω−1 cm−1). By mixing Sb2O3 powder with SnO2 powder in varying proportions, conductivity as high as 1 Ω−1 cm−1 was achieved. Conductivity and optical absorption increases with increasing Sb content. Transparency as high as 85% is obtained in doped 90-nm films on glass. An Sb2O3 content of 10% and more increases the lattice disorder of the films, thereby making them nonconducting. Such films can be made conductive by heat treatment. These films are n type and nondegenerate. The activation energy decreases with increasing antimony content.

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