A monolithic zinc-oxide–on–silicon p-n-diode storage correlator
- 15 November 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (10) , 641-643
- https://doi.org/10.1063/1.89507
Abstract
A monolithic zinc‐oxide–on–silicon p‐n storage correlator has been constructed. When operated both as a convolver and as a storage correlator, the electronic efficiency obtained with this device is comparable to that of the present LiNbO3 airgap devices. This device has the potential of having very large dynamic range because of the absence of spurious bulk‐wave generation, as occurs in the airgap device. Several signal‐processing functions have been demonstrated with this new type of storage correlator. In one chirp correlation experiment, correlation of signals with a time‐bandwith product of 4000 has been observed.Keywords
This publication has 5 references indexed in Scilit:
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- Coherent integration and correlation in a modified acoustoelectric memory correlatorApplied Physics Letters, 1975
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- A monolithic zinc-oxide-on-silicon convolverApplied Physics Letters, 1974