Porous silicon: Quantum sponge structures grown via a self‐adjusting etching process
- 1 February 1992
- journal article
- other
- Published by Wiley in Advanced Materials
- Vol. 4 (2) , 114-116
- https://doi.org/10.1002/adma.19920040212
Abstract
Electroluminescence in porous silicon at room temperature has recently been achieved. This is a crucial step in the realization of silicon‐based optoelecctronic devices but there is still work to be done, for example in improving the stability of the electroluminscence. The materials, the effect, and the potential of the materials in the study of quantum confinement effects in silicon sspongess (see figure) are discussed. magnified imageKeywords
This publication has 11 references indexed in Scilit:
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- An experimental and theoretical study of the formation and microstructure of porous siliconJournal of Crystal Growth, 1985
- Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate siliconJournal of Physics C: Solid State Physics, 1984
- Formation and Properties of Porous Silicon FilmJournal of the Electrochemical Society, 1977
- Electropolishing Silicon in Hydrofluoric Acid SolutionsJournal of the Electrochemical Society, 1958
- Electrolytic Shaping of Germanium and SiliconBell System Technical Journal, 1956