Effect of Low-Dose Ion Implantation on the Stress of Low-Pressure Chemical Vapor Deposited Silicon Nitride Films
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S)
- https://doi.org/10.1143/jjap.37.1256
Abstract
We investigated the effect of reducing stress in low-pressure chemical vapor deposited (LPCVD)-Si3N4 films by a low-dose ion implantation of P, Ar and As. The tensile stress of the Si3N4 films was eliminated by implanting these ions in the middle of the films in doses as low as 3×1013 to 1.2×1014 cm-2. After annealing, although the stress of the implanted nitride films recovers partially, its value still does not reach that of the unimplanted films. The influence of implantation on the local oxidation of silicon (LOCOS) profile and the device characteristics is negligible.Keywords
This publication has 2 references indexed in Scilit:
- Wafer and chip deformation caused by pattern transferPublished by SPIE-Intl Soc Optical Eng ,1996
- Stress in ion-implanted CVD Si3N4 filmsJournal of Applied Physics, 1977