CH and CD Bond-Stretching Modes in the Luminescence of H- and D-Implanted SiC

H or D implantation of $6H$ SiC produces new luminescence spectra at 1.3°K. A striking difference between the H and D spectra are strong lines with energy displacements of 369 and 274 meV for H and D, respectively, energies that are recognized as those of the CH and CD bond-stretching modes. Annealing to 800°C increases the luminescence intensity, apparently by promoting the diffusion of H or D to a vacant Si site, where it forms a bond with one of the neighboring C atoms.