High-performance Ga0.4In0.6As/Al0.55In0.45As pseudomorphic modulation-doped field-effect transistors prepared by molecular-beam epitaxy
- 1 March 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 6 (2) , 657-659
- https://doi.org/10.1116/1.584382
Abstract
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