InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μm
- 16 July 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (15) , 1431-1432
- https://doi.org/10.1049/el:19920910
Abstract
The first successful operation of InGaAs strained layer quantum well (SL-QW) injection lasers at ~2 μm is reported. The threshold current density and the external differential quantum efficiency of 5 μm wide and 800μm long ridge waveguide lasers were 2.5 kA/cm2 and 6%, respectively. The devices had a reverse leakage current of less than 20 μA at –1V indicating epitaxial layers with low defect density.Keywords
This publication has 2 references indexed in Scilit:
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- III-V Alloys Based On Ga Sb For Optical Communications At 2.0-4.5 µmPublished by SPIE-Intl Soc Optical Eng ,1986