Lattice properties of chalcopyrite semiconductors under high pressure

This publication has 14 references indexed in Scilit:

• A^IB^IIIC^VI₂‐Halbleiter mit Chalcopyritstruktur
  Zeitschrift für Chemie, 1987
• Anion displacements and the band-gap anomaly in ternaryABC2chalcopyrite semiconductors
  Physical Review B, 1983
• The application of a position-sensitive detector to high-pressure X-ray diffraction using a diamond-anvil cell
  Journal of Applied Crystallography, 1980
• Control of Oxidation-Induced Stacking Faults in Silicon by Chlorine Implantation
  Japanese Journal of Applied Physics, 1979
• Application of Modulated Phase-Shift-Difference Method with Rotating Quarter-Wave Plate to CuGaS₂
  Japanese Journal of Applied Physics, 1978
• Zone‐centered phonons in A^IB^IIIS₂ chalcopyrites
  Physica Status Solidi (b), 1975
• Zone‐centered phonons in ternary compounds of chalcopyrite structure
  Physica Status Solidi (b), 1975
• Lattice dynamics of AgGaS₂
  Journal of Physics C: Solid State Physics, 1974
• Nuclear Magnetic Resonance in I_B–III–VI₂ Semiconductors
  Physica Status Solidi (b), 1974
• Piezoelectric nonlinear optic CuGaS2 and CuInS2 crystal structure: Sublattice distortion in AIBIIIC2VI and AIIBIVC2V type chalcopyrites
  The Journal of Chemical Physics, 1973