Phase intergrowth in Bi2Sr2Can1CunOy thin films

Abstract
The presence of phase intergrowth in Bi-Sr-Ca-Cu-O thin films, in situ grown using a laser-ablation technique, has been investigated. A simple intergrowth model has been used to analyze the experimental x-ray-diffraction patterns of the films and has allowed us to measure the stacking-fault proportion in the films. Rutherford-backscattering spectrometry (RBS) has also been used in order to determine the cationic composition. The Bi/Cu ratio obtained by x-ray-diffraction analysis is in very good agreement with the results of RBS analysis. The intergrowth phenomenon allows one to change the structure continuously from one pure phase to another one, a fact that is experimentally observed when the oxygen pressure during deposition is changed.